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Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 027304
Authors:  Zhang, J;  Yu, JL;  Cheng, SY;  Lai, YF;  Chen, YH
Adobe PDF(252Kb)  |  Favorite  |  View/Download:363/124  |  Submit date:2015/03/20
Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 067302
Authors:  Wang YB;  Xu Y;  Zhang Y;  Yu X;  Song GF;  Chen LH
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Inas/gasb Superlattices  P-doping Concentration  Electrical And Optical Properties  
Degree of fourth-order coherence by double Hanbury Brown-Twiss detections 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 8, 页码: Art. No. 084205
Authors:  Zhang YC (Zhang Yu-Chi);  Li YA (Li Yuan);  Guo YQ (Guo Yan-Qiang);  Li G (Li Gang);  Wang JM (Wang Jun-Min);  Zhang TC (Zhang Tian-Cai)
Adobe PDF(143Kb)  |  Favorite  |  View/Download:959/290  |  Submit date:2010/09/07
Fourth-order Coherence  Quantum State  Single-photon Counting  
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106802
Authors:  Guo X (Guo Xi);  Wang H (Wang Hui);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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Ingan  In-plane Grazing Incidence X-ray Diffraction  Reciprocal Space Mapping  Biaxial Strain  Critical Layer Thickness  Optical-properties  Lattice-constants  Gan  Heterostructures  Alloys  Wells  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1164/334  |  Submit date:2010/08/17
In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers  
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
Adobe PDF(2176Kb)  |  Favorite  |  View/Download:1257/389  |  Submit date:2010/04/13
Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film  
Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106106
Authors:  Tang HM (Tang Hai-Ma);  Zheng ZS (Zheng Zhong-Shan);  Zhang EX (Zhang En-Xia);  Yu F (Yu Fang);  Li N (Li Ning);  Wang NJ (Wang Ning-Juan);  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. 电子邮箱地址: zszheng513@163.com
Adobe PDF(829Kb)  |  Favorite  |  View/Download:1158/269  |  Submit date:2010/11/02
Silicon-on-insulator Wafers  Radiation Hardness  Nitrogen Implantation  
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 7, 页码: 3044-3048
Authors:  Ding WC;  Liu Y;  Zhang Y;  Guo JC;  Zuo YH;  Cheng BW;  Yu JZ;  Wang QM;  Ding WC Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. E-mail Address: wcd04@semi.ac.cn
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Er Doping  Silicon Nitride  Photoluminescence  
Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 6, 页码: 2223-2228
Authors:  Guo JC;  Zuo YH;  Zhang Y;  Ding WC;  Cheng BW;  Yu JZ;  Wang QM;  Guo JC Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. E-mail Address: jchguo@semi.ac.cn
Adobe PDF(610Kb)  |  Favorite  |  View/Download:1074/258  |  Submit date:2010/03/08
Electrical Bandwidth  Frequency Response  Optical Delay  Photodetectors