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砷化镓衬底上的多层变形缓冲层的制作方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高宏玲;  曾一平;  段瑞飞;  王宝强;  朱战平;  崔利杰
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Silicon doping induced increment of quantum dot density 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 卷号: 42, 期号: 10, 页码: 6314-6318
Authors:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng Y;  Duan RF,Chinese Acad Sci,Inst Semicond,Novel Mat Dept,Beijing 100083,Peoples R China.
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Mbe  Silicon  Doping  Density  Ingaas/gaas  Saod  Ingaas  Islands  Gaas  
Optimization of InGaAs quantum dots for optoelectronic applications 会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
Authors:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng YP;  Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
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Infrared Photodetectors