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一种氢致解偶合的异质外延用柔性衬底 专利
专利类型: 发明, 申请日期: 2005-03-09, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张志成;  杨少延;  黎大兵;  刘祥林;  陈涌海;  朱勤生;  王占国
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Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
Authors:  Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Cracks  
制备低温超薄异质外延用柔性衬底的方法 专利
专利类型: 发明, 申请日期: 2004-03-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张志成;  杨少延;  黎大兵;  陈涌海;  朱勤生;  王占国
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Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
Authors:  Han XX;  Li DB;  Yuan HR;  Sun XH;  Liu XL;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Field-effect Transistors  
GaN的声表面波特性研究 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 161-164
Authors:  严莉;  陈晓阳;  何世堂;  李红浪;  韩培德;  陈振;  陆大成;  刘祥林;  王晓晖;  李昱峰;  袁海荣;  陆沅;  黎大兵;  朱勤生;  王占国
Adobe PDF(178Kb)  |  Favorite  |  View/Download:866/319  |  Submit date:2010/11/23
钝化低温法生长多层InGaN量子点的结构和光学特性 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 135-138
Authors:  王晓晖;  李昱峰;  陆大成;  刘祥林;  袁海荣;  陆沅;  黎大兵;  王秀凤;  朱勤生;  王占国;  陈振;  韩培德
Adobe PDF(128Kb)  |  Favorite  |  View/Download:779/233  |  Submit date:2010/11/23