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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:  Zhang BA;  Song HP;  Xu XQ;  Liu JM;  Wang J;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Semiconductor Nanowires  Nitride Nanotubes  Gan  Emission  Mechanism  
A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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Measurement of wurtzite ZnO/rutile TiO(2) heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:  Wang, J;  Liu, XL;  Yang, AL;  Zheng, GL;  Yang, SY;  Wei, HY;  Zhu, QS;  Wang, ZG;  Liu, XL (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China,xlliu@semi.ac.cn;  why@semi.ac.cn
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Sensitized Solar-cells  Photocatalyzed Transformation  Chloroaromatic Derivatives  Zinc-oxide  Films  Powder  Phenol  
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
Adobe PDF(376Kb)  |  Favorite  |  View/Download:1814/661  |  Submit date:2011/07/05
Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:  Wang J;  Liu XL;  Yang AL;  Zheng GL;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Liu, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xlliu@semi.ac.cn;  why@semi.ac.cn
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Sensitized Solar-cells  Photocatalyzed Transformation  Chloroaromatic Derivatives  Zinc-oxide  Films  Powder  Phenol  
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84345
Authors:  Kong JX;  Zhu QS;  Xu B;  Wang ZG;  Kong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1307/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe