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Optimization of InGaAs quantum dots for optoelectronic applications 会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
作者:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng YP;  Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1064/245  |  提交时间：2010/10/29
Infrared Photodetectors  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1157/174  |  提交时间：2010/11/15
Inp(001)  Epitaxy  Gaas  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1244/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1495/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility  
Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1), THESSALONIKI, GREECE, AUG 09-13, 1998
作者:  Liu NZ;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Ge WK;  Sou IK;  Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1086/186  |  提交时间：2010/11/15
Absorption-edge  Strains  Zns  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1422/239  |  提交时间：2010/11/15
Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors  
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：863/155  |  提交时间：2010/10/29