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Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 540, 页码: 46-48
Authors:  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Le LC (Le, L. C.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Liu ZS (Liu, Z. S.);  Zhang SM (Zhang, S. M.);  Jia QJ (Jia, Q. J.);  Yang H (Yang, Hui)
Adobe PDF(332Kb)  |  Favorite  |  View/Download:857/289  |  Submit date:2013/03/27
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 8, 页码: 085017
Authors:  Wu LL (Wu, L. L.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Chen P (Chen, P.);  Le LC (Le, L. C.);  Li L (Li, L.);  Liu ZS (Liu, Z. S.);  Zhang SM (Zhang, S. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang BS (Zhang, B. S.);  Yang H (Yang, H.)
Adobe PDF(395Kb)  |  Favorite  |  View/Download:1000/207  |  Submit date:2013/04/02
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 053104
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
Adobe PDF(1999Kb)  |  Favorite  |  View/Download:948/172  |  Submit date:2013/04/02
External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Authors:  Li WW (Li W. W.);  Zhu JJ (Zhu J. J.);  Liang JR (Liang J. R.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
Adobe PDF(772Kb)  |  Favorite  |  View/Download:770/253  |  Submit date:2012/02/21
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
Adobe PDF(762Kb)  |  Favorite  |  View/Download:1115/511  |  Submit date:2012/07/17
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文
THIN SOLID FILMS, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Adobe PDF(656Kb)  |  Favorite  |  View/Download:1148/445  |  Submit date:2010/08/17
Gallium Nitride  Indium Gallium Nitride  Cathodeluminescence  X-ray Diffraction  Metal-organic Chemical Vapor Deposition  
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
PHYSICA B-CONDENSED MATTER, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Qiu YX (Qiu Y. X.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Adobe PDF(670Kb)  |  Favorite  |  View/Download:3127/1469  |  Submit date:2010/12/12
Ingan  Dislocation  Metalorganic Chemical Vapor Deposition  High Resolution X-ray Diffraction  Cathodoluminescence  Misfit Dislocations  Quantum-wells  Band-gap  Epilayers  Generation  Alloys  Inn