中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共12条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1370/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Feng, W (Feng, W.);  Pan, JQ (Pan, J. Q.);  Zhou, F (Zhou, F.);  Zhao, LJ (Zhao, L. J.);  Zhu, HL (Zhu, H. L.);  Wang, W (Wang, W.);  Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)  |  收藏  |  浏览/下载：1220/295  |  提交时间：2010/03/29
Buried-heterostructure Lasers  Bandgap Energy Control  Vapor-phase Epitaxy  Pressure Movpe  Converter  
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xie, HY;  Pan, JQ;  Yang, H;  Zhao, LJ;  Zhu, HL;  Wang, LF;  Cui, AH;  Wang, W;  Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1573/404  |  提交时间：2010/03/29
Wide Gain Bandwidth  Dfb Laser  Non-identical Quantum Well  Cwdm  Superluminescent Diodes  
Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938 会议论文
Passive Components and Fiber-based Devices II丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Yang, H;  Zhu, HL;  Xie, HY;  Zhao, LJ;  Zhou, F;  Wang, W;  Yang, H, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：1606/315  |  提交时间：2010/03/29
Coplanar Waveguide (Cpw)  v Groove  Low Microwave Loss  Passive Coupling  Optoelectronic Packaging  
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1224/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Zhang BS;  Zhu JJ;  Wang YT;  Yang H;  Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1361/302  |  提交时间：2010/10/29
Vapor-phase Epitaxy  Layers  Aln  
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:  Feng Y;  Zhu M;  Liu F;  Liu J;  Han H;  Han Y;  Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：1248/315  |  提交时间：2010/11/15
Poly-si  Structure  Hot-wire  Plasma-enhanced Chemical Vapor Deposition (Pecvd)  Chemical-vapor-deposition  Microcrystalline Silicon  Hydrogen  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1229/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载：972/186  |  提交时间：2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1278/261  |  提交时间：2010/11/15
Quantum Dot  Growth Interruption  Quantum Dot Laser