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Tight-banding Approach for Phonic Crystal Coupled-cavity-mode Estimation 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 72-73 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Sun H (Sun Hui);  Jiang B (Jiang Bin);  Chen W (Chen Wei);  Zhou WJ (Zhou Wenjun);  Xing MX (Xing Minxin);  Liu AJ (Liu Anjin);  Zheng WH (Zheng Wanhua)
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1466/225  |  提交时间：2011/07/14
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载：1298/242  |  提交时间：2010/11/15
Molecular-beam Epitaxy  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1587/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(89Kb)  |  收藏  |  浏览/下载：1195/331  |  提交时间：2010/11/15
Optical-transitions  Photoluminescence  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1457/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1457/311  |  提交时间：2010/11/15
Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：937/211  |  提交时间：2010/10/29