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Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 71-76
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Li DB;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Dislocation  Strain  Molecular Beam Epitaxy  Organometallic Vapor Phase Epitaxy  Semiconductor Iii-v Materials  Critical Thickness  Heteroepitaxial Growth  Layers  Oxidation  Epitaxy