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连续激射的GaN基激光器研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  张立群
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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
GaN基激光器的特性 期刊论文
红外与激光工程, 2009, 卷号: 38, 期号: 1, 页码: 41-44
Authors:  张立群;  张书明;  江德生;  朱建军;  赵德刚;  杨辉
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GaN-based violet laser diodes grown on free-standing GaN substrate 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 12, 页码: 5350-5353
Authors:  Zhang LQ;  Zhang SM;  Jiang DS;  Wang H;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Yang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Gan Laser Diode  Mounting Configuration  Active Region Temperature  Continuous-wave Operation  
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Luminescence  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering  
PIXE analysis of Fe content in Fe-implanted GaN film 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 252, 期号: 2, 页码: 225-229
Authors:  Zhang B;  Shi LQ;  Chen CC;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China. 电子邮箱地址: binzhang@fudan.edu.cn
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Pixe  
GAN_(1-x)P_x三元合金的MOCVD生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 7, 页码: 782-784
Authors:  陈敦军;  毕朝霞;  沈波;  张开骁;  顾书林;  张荣;  施毅;  胡立群;  郑有(火+斗);  孙学浩;  万寿科;  王占国
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GaAs/GaAlAs量子阱双色红外探测器的光电性质的研究 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 8, 页码: 573
Authors:  崔丽秋;  江德生;  张耀辉;  吴文刚;  刘伟;  宋春英;  李月霞;  孙宝权;  王若桢
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