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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1572/341  |  提交时间：2010/03/29
Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1294/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1484/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer