SEMI OpenIR

Browse/Search Results:  1-9 of 9 Help

Filters                
Selected(0)Clear Items/Page:    Sort:
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(829Kb)  |  Favorite  |  View/Download:1128/312  |  Submit date:2010/03/08
Multiple-quantum Wells  
Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 253, 期号: 5, 页码: 2452-2455
Authors:  Zhao, DG (Zhao, D. G.);  Liu, ZS (Liu, Z. S.);  Zhu, JJ (Zhu, J. J.);  Zhang, SM (Zhang, S. M.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, Hui);  Liang, JW (Liang, J. W.);  Li, XY (Li, X. Y.);  Gong, HM (Gong, H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(581Kb)  |  Favorite  |  View/Download:1128/412  |  Submit date:2010/03/29
Al Incorporation  
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 15, 页码: Art.No.152105
Authors:  Wang JF (Wang J. F.);  Yao DZ (Yao D. Z.);  Chen J (Chen J.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: wlino@red.semi.ac.cn
Adobe PDF(226Kb)  |  Favorite  |  View/Download:1023/351  |  Submit date:2010/04/11
Chemical-vapor-deposition  Stress Evolution  Defect Structure  Epitaxial Gan  Thin-films  Algan  Dislocations  Relaxation  Reduction  
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 11, 页码: Art.No.112106
Authors:  Zhao DG (Zhao D. G.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Jiang DS (Jiang D. S.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Wang YT (Wang Y. T.);  Liang JW (Liang J. W.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(66Kb)  |  Favorite  |  View/Download:1236/412  |  Submit date:2010/04/11
X-ray-diffraction  Scattering  Growth  Layers  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
Adobe PDF(287Kb)  |  Favorite  |  View/Download:1031/382  |  Submit date:2010/04/11
Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain  
Terahertz pulse generation with LT-GaAs photoconductive antenna 会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
Authors:  Cui, LJ (Cui, L. J.);  Zeng, YP (Zeng, Y. P.);  Zhao, GZ (Zhao, G. Z.);  Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1019Kb)  |  Favorite  |  View/Download:826/326  |  Submit date:2010/03/29
Temperature-grown Gaas  Carrier Dynamics  Emission  
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 25, 页码: Art.No.252101
Authors:  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Liang JW (Liang J. W.);  Hao XP (Hao X. P.);  Wei L (Wei L.);  Li X (Li X.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(177Kb)  |  Favorite  |  View/Download:1160/432  |  Submit date:2010/04/11
Yellow Luminescence  Electron-beam  Vacancies  
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35
Authors:  Zhao C (Zhao C.);  Chen YH (Chen Y. H.);  Zhao M (Zhao Man);  Zhang CL (Zhang C. L.);  Xu B (Xu B.);  Yu LK (Yu L. K.);  Sun J (Sun J.);  Lei W (Lei W.);  Wang ZG (Wang Z. G.);  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  Favorite  |  View/Download:827/292  |  Submit date:2010/04/11
Monte Carlo Simulation  Molecular Beam Epitaxy  Kinetic Effects  Quantum Dot  Layer  
两种结构GaN基太阳盲紫外探测器 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1040-1042
Authors:  李雪;  陈俊;  何政;  赵德刚;  龚海梅;  方家熊
Adobe PDF(266Kb)  |  Favorite  |  View/Download:954/281  |  Submit date:2010/11/23