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Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 11, 页码: 115027
Authors:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
Adobe PDF(629Kb)  |  Favorite  |  View/Download:384/133  |  Submit date:2015/03/19
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Authors:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
Adobe PDF(997Kb)  |  Favorite  |  View/Download:389/97  |  Submit date:2015/03/20
Annealing effect on the electron spin dynamics in heavily Mn-doped (Ga,Mn)As 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 卷号: 64, 期号: 10, 页码: 1504-1508
Authors:  Yue, H;  Chen, L;  Gao, HX;  Zhao, JH;  Zhang, XH
Adobe PDF(347Kb)  |  Favorite  |  View/Download:759/223  |  Submit date:2015/08/21