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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科... [16]
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硅衬底氮化镓材料制备生长研究
学位论文
, 北京: 中国科学院大学, 2015
Authors:
冯玉霞
Adobe PDF(4277Kb)
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View/Download:716/94
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Submit date:2015/06/02
Si衬底
Aln
Gan
生长机制
应力
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:
Cao, ZF
;
Lin, ZJ
;
Lu, YJ
;
Luan, CB
;
Yu, YX
;
Chen, H
;
Wang, ZG
Adobe PDF(255Kb)
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View/Download:804/220
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Submit date:2013/03/20
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:
Luan CB (Luan, Chongbiao)
;
Lin ZJ (Lin, Zhaojun)
;
Lv YJ (Lv, Yuanjie)
;
Meng LG (Meng, Lingguo)
;
Yu YX (Yu, Yingxia)
;
Cao ZF (Cao, Zhifang)
;
Chen H (Chen, Hong)
;
Wang ZG (Wang, Zhanguo)
Adobe PDF(817Kb)
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View/Download:911/262
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Submit date:2013/03/27
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:
Lu YJ (Lu Yuan-Jie)
;
Lin ZJ (Lin Zhao-Jun)
;
Yu YX (Yu Ying-Xia)
;
Meng LG (Meng Ling-Guo)
;
Cao ZF (Cao Zhi-Fang)
;
Luan CB (Luan Chong-Biao)
;
Wang ZG (Wang Zhan-Guo)
Adobe PDF(147Kb)
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View/Download:715/198
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Submit date:2013/04/02
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:
Luan CB (Luan, Chongbiao)
;
Lin ZJ (Lin, Zhaojun)
;
Feng ZH (Feng, Zhihong)
;
Meng LG (Meng, Lingguo)
;
Lv YJ (Lv, Yuanjie)
;
Cao ZF (Cao, Zhifang)
;
Yu YX (Yu, Yingxia)
;
Wang ZG (Wang, Zhanguo)
Adobe PDF(908Kb)
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View/Download:882/221
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Submit date:2013/04/02
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:
Lv YJ (Lv, Yuanjie)
;
Lin ZJ (Lin, Zhaojun)
;
Meng LG (Meng, Lingguo)
;
Luan CB (Luan, Chongbiao)
;
Cao ZF (Cao, Zhifang)
;
Yu YX (Yu, Yingxia)
;
Feng ZH (Feng, Zhihong)
;
Wang ZG (Wang, Zhanguo)
Adobe PDF(741Kb)
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View/Download:816/270
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Submit date:2013/04/02
不同醇类对单晶硅绒面特性的影响
期刊论文
材料导报, 2011, 卷号: 25, 期号: 1B, 页码: 41194
Authors:
屈盛
;
张兴旺
;
毛和璜
;
余银祥
;
韩增华
;
汤叶华
;
周春兰
;
王文静
Adobe PDF(290Kb)
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View/Download:1034/331
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Submit date:2012/07/17
A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser
期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 3, 页码: Art. No. 034209
Authors:
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Liu Y (Liu Yu)
;
Xie L (Xie Liang)
;
Wang ZG (Wang Zhan-Guo)
;
Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
Adobe PDF(515Kb)
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View/Download:1310/420
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Submit date:2010/04/22
Room-temperature
Performance
Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 7, 页码: Art. No. 072103
Authors:
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Wang ZG (Wang Zhan-Guo)
;
Ji, HM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
Adobe PDF(1286Kb)
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View/Download:1045/316
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Submit date:2010/08/17
Dependence
Well
Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 1, 页码: Art. No. 013102
Authors:
Xu PF (Xu Peng-Fei)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Cao YL (Cao Yu-Lian)
;
Gu
;
YX (Gu Yong-Xian)
;
Liu Y (Liu Yu)
;
Ma WQ (Ma Wen-Quan)
;
Wang ZG (Wang Zhan-Guo)
;
Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
Adobe PDF(463Kb)
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View/Download:1433/427
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Submit date:2010/04/13
Energy States
Optical Modulation
Quantum Dot Lasers
Threshold Current
Well
Gain