SEMI OpenIR

Browse/Search Results:  1-2 of 2 Help

Filters                
Selected(0)Clear Items/Page:    Sort:
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1174/334  |  Submit date:2010/08/17
In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
Adobe PDF(2176Kb)  |  Favorite  |  View/Download:1269/389  |  Submit date:2010/04/13
Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film