SEMI OpenIR

Browse/Search Results:  1-6 of 6 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
Adobe PDF(255Kb)  |  Favorite  |  View/Download:770/220  |  Submit date:2013/03/20
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
Adobe PDF(147Kb)  |  Favorite  |  View/Download:681/198  |  Submit date:2013/04/02
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.30507
Authors:  Yu X;  Gu YX;  Wang Q;  Wei X;  Chen LH;  Wang, Q, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. wangqing@mail.semi.ac.cn
Adobe PDF(348Kb)  |  Favorite  |  View/Download:1309/393  |  Submit date:2011/07/06
Type-ii 'w' Quantum Well  Burt-foreman Hamiltonian  Finite Element Methods  Lasers  Alloys  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1174/334  |  Submit date:2010/08/17
In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
Adobe PDF(2176Kb)  |  Favorite  |  View/Download:1269/389  |  Submit date:2010/04/13
Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film  
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Wang H (Wang Hui);  Chen GF (Chen Gui-Feng);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jjzhu@red.semi.ac.cn
Adobe PDF(2560Kb)  |  Favorite  |  View/Download:963/228  |  Submit date:2010/03/08
Gan