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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)  |  收藏  |  浏览/下载：2492/490  |  提交时间：2011/07/17
Monolithic Integration of Widely Tunable Sampled Grating DBR Laser with Tilted Semiconductor Optical Amplifier 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES V 丛书: Proceedings of SPIE 卷: 7987, Shanghai, 2010
作者:  Ye N (Ye Nan);  Liu Y (Liu Yang);  Wang BJ (Wang BaoJun);  Zhou DB (Zhou DaiBing);  Pang JQ (Pang JiaoQing);  Zhao LJ (Zhao LingJuan);  Wang W (Wang Wei)
Adobe PDF(937Kb)  |  收藏  |  浏览/下载：2608/839  |  提交时间：2011/09/14
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1330/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks