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Color filter-less technology of LED back light for LCD-TV - art. no. 68410G 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Fan, MN;  Liang, M;  Guo, DB;  Yang, FH;  Wang, LC;  Wang, GH;  Li, JM;  Fan, MN, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Lighting, Beijing 100083, Peoples R China.
收藏  |  浏览/下载：1753/0  |  提交时间：2010/03/09
Led Back Light Unit  Color Filter-less  Emitting Phosphors  Liquid Crystal Display  
Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liang, M;  Fan, MN;  Guo, DB;  Liu, GY;  Wang, GH;  Yang, FH;  Wang, LC;  Zeng, YP;  Li, JM;  Liang, M, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(1117Kb)  |  收藏  |  浏览/下载：2242/765  |  提交时间：2010/03/09
Led Backlight  Three-basic-color  Color Gamut  Relative Spectrum Distribution (Rsd)  
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1224/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
Analysis for the angle dependence of GaAs based RCE photodetectors 会议论文
APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 4905, SHANGHAI, PEOPLES R CHINA, OCT 15-18, 2002
作者:  Liang K;  Yang XH;  Du Y;  Wu RH;  Liang K Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1225/229  |  提交时间：2010/10/29
Galnnas  Resonant Cavity Enhanced Photodetectors  Angle-selected Tuning  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1585/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：937/211  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1295/301  |  提交时间：2010/11/15
Znse/gaas Interface  States