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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 5, 页码: Art. No. 057802
Authors:  Zhao DG (Zhao De-Gang);  Zhang S (Zhang Shuang);  Liu WB (Liu Wen-Bao);  Hao XP (Hao Xiao-Peng);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wei L (Wei Long);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Ga Vacancies  Mocvd  Gan  Schottky Barrier Photodetector  Reverse-bias Leakage  Molecular-beam Epitaxy  P-n-junctions  Positron-annihilation  Diodes  Films