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Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.602110
Authors:  Cong GW;  Peng WQ;  Wei HY;  Han XX;  Wu JJ;  Liu XL;  Zhu QS;  Wang ZG;  Lu JG;  Ye ZZ;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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P-type Conduction  Thin-films  Ohmic Contacts  
Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
Authors:  Cong GW;  Peng WQ;  Wei HY;  Liu XL;  Wu JJ;  Han XX;  Zhu QS;  Wang ZG;  Ye ZZ;  Lu JG;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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Electronic-structure Calculations  Ii-vi Semiconductors  Thin-films  Photoelectron-spectroscopy  Doped Zno  1st-principles  Conduction  States  
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
Authors:  Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Cracks  
缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
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