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Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 8, 页码: Art.No.083123
Authors:  Xu SJ;  Li GQ;  Wang YJ;  Zhao Y;  Chen GH;  Zhao DG;  Zhu JJ;  Yang H;  Yu DP;  Wang JN;  Xu, SJ, Univ Hong Kong, Joint Lab New Mat, CAS, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail:
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