中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共9条，第1-9条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
High quality microcrystalline Si films by hydrogen dilution profile 会议论文
THIN SOLID FILMS, BRATISLAVA, SLOVAKIA, SEP 15-20, 2002
作者:  Gu, JH (Gu, Jinhua);  Zhu, MF (Zhu, Meifang);  Wang, LJ (Wang, Liujiu);  Liu, FZ (Liu, Fengzhen);  Zhou, BQ (Zhou, Bingqing);  Ding, K (Ding, Kun);  Li, GH (Li, Guohua);  Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. 电子邮箱地址: mfzhu@gucas.ac.cn
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：1164/240  |  提交时间：2010/03/29
Microcrystalline Si Thin Film  
Optimization of InGaAs quantum dots for optoelectronic applications 会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
作者:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng YP;  Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1066/245  |  提交时间：2010/10/29
Infrared Photodetectors  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1367/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1245/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1498/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1259/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1166/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Jiang DS;  Gong Q;  Chen YB;  Sun BQ;  Liang JB;  Wang ZG;  Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(279Kb)  |  收藏  |  浏览/下载：1103/188  |  提交时间：2010/11/15
Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots 会议论文
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19), BOSTON, MA, NOV 02-05, 1998
作者:  Zhu HJ;  Wang ZM;  Sun BQ;  Feng SL;  Jiang DS;  Zheng HZ;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：824/0  |  提交时间：2010/10/29