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Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Liu, Z;  Wang, JX;  Wang, XL;  Hu, GX;  Guo, LC;  Liu, HX;  Li, JP;  Li, JM;  Zeng, YP;  Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
Adobe PDF(253Kb)  |  收藏  |  浏览/下载：1557/543  |  提交时间：2010/03/29
Surface Morphology  
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1216/245  |  提交时间：2010/03/29
Resonant Tunneling Diode