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Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 11, 页码: Art.No.112106
Authors:  Zhao DG (Zhao D. G.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Jiang DS (Jiang D. S.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Wang YT (Wang Y. T.);  Liang JW (Liang J. W.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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X-ray-diffraction  Scattering  Growth  Layers