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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1483/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文
FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 454, SORRENTO, ITALY, SEP 10-15, 2000
作者:  Lu DC;  Lin LY;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：1022/164  |  提交时间：2010/10/29
Transport  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：977/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:  Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)  |  收藏  |  浏览/下载：1275/179  |  提交时间：2010/11/15
Gan  Annealing Treatment  In-doping  Movpe  Photoluminescence  Chemical-vapor-deposition  Phase Epitaxy  Buffer Layer  Films  Sapphire  
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：1380/179  |  提交时间：2010/10/29
Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films  
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：971/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：882/0  |  提交时间：2010/10/29
Sapphire  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
收藏  |  浏览/下载：842/0  |  提交时间：2010/10/29
Diodes  
Growth and characterization of GaN on LiGaO2 会议论文
JOURNAL OF CRYSTAL GROWTH, 195 (1-4), LA JOLLA, CALIFORNIA, MAY 31-JUN 04, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(161Kb)  |  收藏  |  浏览/下载：1058/205  |  提交时间：2010/11/15
Diodes  
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1363/364  |  提交时间：2010/11/15
Gan  Mgal2o4  Movpe  Led  Diodes