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Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：972/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：882/0  |  提交时间：2010/10/29
Sapphire  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
收藏  |  浏览/下载：844/0  |  提交时间：2010/10/29
Diodes