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Directed XOR/XNOR logic circuit implemented by microring resonators: simulation and demonstration 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012105 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Zhang L (Zhang Lei);  Ji RQ (Ji Ruiqiang);  Jia LX (Jia Lianxi);  Yang L (Yang Lin);  Zhou P (Zhou Ping);  Tian YH (Tian Yonghui);  Chen P (Chen Ping);  Lu YY (Lu Yangyang);  Jiang ZY (Jiang Zhenyu);  Liu YL (Liu Yuliang)
Adobe PDF(784Kb)  |  收藏  |  浏览/下载：2667/617  |  提交时间：2011/07/15
Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文
FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 454, SORRENTO, ITALY, SEP 10-15, 2000
作者:  Lu DC;  Lin LY;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：1023/164  |  提交时间：2010/10/29
Transport  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1346/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Liu XL;  Wang LS;  Lu DC;  Wang D;  Wang XH;  Lin LY;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
Adobe PDF(122Kb)  |  收藏  |  浏览/下载：1376/401  |  提交时间：2010/11/15
Movpe  Gan  Gan Buffer  Heavy Si-doping