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无权访问的条目 期刊论文
作者:  Iqbal J;  Liu XF;  Majid A;  Yu DP;  Yu RH;  Iqbal J Tsinghua Univ Dept Mat Sci & Engn Adv Mat Lab Beijing 100084 Peoples R China. E-mail Address: javedsaggu73@yahoo.com;  rhyu@tsinghua.edu.cn
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1396/387  |  提交时间：2010/03/08
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1619/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1861/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
无权访问的条目 期刊论文
作者:  Wang H;  Zhu HL;  Chen XF;  Kong DH;  Wang LS;  Zhang W;  Liu Y;  Zhao LJ;  Wang W;  Wang H Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: whuan21@semi.ac.cn
Adobe PDF(411Kb)  |  收藏  |  浏览/下载：952/284  |  提交时间：2010/03/08