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Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Jin P (Jin P.);  Lv XQ (Lv X. Q.);  Liu N (Liu N.);  Zhang ZY (Zhang Z. Y.);  Wang ZG (Wang Z. G.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载：1625/330  |  提交时间：2010/11/01
Superluminescent Diodes  
High-speed analog DFB laser module operated in direct modulation for Ku-band 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 78440P 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
作者:  Liu Y (Liu Yu);  Man JW (Man Jiang Wei);  Han W (Han Wei);  Wang X (Wang Xin);  Yuan HQ (Yuan Hai Qing);  Zhu HL (Zhu Hong Liang);  Xie LA (Xie Liang);  Zhu NH (Zhu Ning Hua)
Adobe PDF(522Kb)  |  收藏  |  浏览/下载：6353/2742  |  提交时间：2011/07/14
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1731/471  |  提交时间：2010/06/04
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1211/281  |  提交时间：2010/03/29
4h-sic