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Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Authors:  Shu Q;  Shu YC;  Zhang GJ;  Liu RB;  Yao JH;  Pi B;  Xing XD;  Lin YW;  Xu JJ;  Wang ZG;  Shu, YC, Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China. E-mail: shuyc@nankai.edu.cn
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Two-dimensional Electron Gas  Quantum Hall Effect  Sdh Oscillations  Persistent Photoconductivity  Heterostructures  Alxga1-xas  Scattering  Lifetime  Mobility  Gaas  Te  
不同淀积厚度InAs量子点的喇曼散射 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 1012-1015
Authors:  张冠杰;  徐波;  陈涌海;  姚江宏;  林耀望;  舒永春;  皮彪;  邢晓东;  刘如彬;  舒强;  王占国;  许京军
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三维半导体GaAs量子阱微腔中的腔极化激元 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1319-1323
Authors:  刘文楷;  林世鸣;  安艳伟;  张存善
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非掺半绝缘磷化铟晶片的制备及其均匀性 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 53-56
Authors:  董宏伟;  赵有文;  焦景华;  赵建群;  林兰英
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非原生掺杂半绝缘磷化铟(InP)及其应用对比 期刊论文
科学通报, 2002, 卷号: 47, 期号: 23, 页码: 1761-1762
Authors:  董宏伟;  赵有文;  焦景华;  曾一平;  李晋闽;  林兰英
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Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 卷号: 20, 期号: 1, 页码: 25-29
Authors:  Luo XD;  Xu ZY;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Ganas  Band Offset  Pl  Molecular-beam Epitaxy  Alloys  Ganas/gaas  1.3-mu-m  Gaasn  
离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 1, 页码: 31
Authors:  李联合;  潘钟;  张伟;  林耀望;  王学宇;  吴荣汉
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分子束外延生长高应变单量子阱激光器(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 9, 页码: 1097
Authors:  潘钟;  李联合;  徐应强;  杜云;  林耀望
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GaN_xAs_(1-x)/GaAs单量子阱发光性质及带阶研究 期刊论文
红外与毫米波学报, 2001, 卷号: 20, 期号: 1, 页码: 25
Authors:  罗向东;  徐仲英;  潘钟;  李联合;  林耀望;  葛维琨
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分子束外延GaN/GaAs立方相异质结构的电子显微分析 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 1, 页码: 58
Authors:  韩培德;  杨海峰;  杨辉;  林耀望;  张泽;  李新峰;  周增圻
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