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Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Authors:  Dong ZY;  Zhao YW;  Zeng YP;  Duan ML;  Sun WR;  Jiao JH;  Lin LY;  Dong ZY,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(387Kb)  |  Favorite  |  View/Download:1465/402  |  Submit date:2010/08/12
Annealing  Defects  Etching  Semiconducting Indium Phosphide  Fe-doped Inp  Semiinsulating Inp  Indium-phosphide  Defects  Diffusion  Crystals  Wafers  
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Authors:  Dong HW;  Zhao YW;  Zeng YP;  Jiao JH;  Li JM;  Lin LY;  Dong HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(145Kb)  |  Favorite  |  View/Download:1252/425  |  Submit date:2010/08/12
Diffusion  Interfaces  Substrates  Molecular Beam Epitaxy  Phosphides  Semiconducting Indium Phosphide  Undoped Semiinsulating Inp  Chemical-vapor-deposition  Phosphide Vapor  Fe  Interface  Photoluminescence  Wafer  Uniformity  Diffusion  Pressure  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(109Kb)  |  Favorite  |  View/Download:864/256  |  Submit date:2010/08/12
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Authors:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(124Kb)  |  Favorite  |  View/Download:800/230  |  Submit date:2010/08/12
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Ge WK;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(146Kb)  |  Favorite  |  View/Download:923/277  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Quantum Wells  Band-gap Energy  Photoluminescence  Temperature  Ganxas1-x  Films  
Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 4, 页码: 648-652
Authors:  Pan Z;  Li LH;  Lin YW;  Zhou ZQ;  Zhang W;  Wang YT;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(199Kb)  |  Favorite  |  View/Download:913/323  |  Submit date:2010/08/12
Ganas/gaas Superlattice  X-ray Diffraction  Periodicity Fluctuation  Mbe  Rheed  Band-gap Energy  Nitrogen  Alloys  Diffraction  Coefficient  Solubility  Operation  Gaas1-xnx  Gaasn  
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Authors:  Pan Z;  Wang YT;  Li LH;  Zhang W;  Lin YW;  Zhou ZQ;  Wu RH;  Pan Z,Chinese Acad Sci,State Key Lab Integrated Optoelect,Natl Res Ctr Optoelect Technol,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(351Kb)  |  Favorite  |  View/Download:904/273  |  Submit date:2010/08/12
X-ray Diffraction  Strain Relaxation  Ganxas1-x/gaas  Photoluminescence  Rheed  Molecular-beam Epitaxy  Temperature Pulsed Operation  Band-gap Energy  Nitrogen  Gaasn  Ganxas1-x  Gaas1-xnx  Alloys  Lasers  Layers  
EPITAXIAL-GROWTH OF HIGH-PURITY GAAS IN AN ARGON ATMOSPHERE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1984, 卷号: 70, 期号: 0, 页码: 108-111
Authors:  LIN YW;  ZHANG YY;  LI HL;  LIANG JW;  LIN LY;  LIN YW CHINESE ACAD MED SCIINST SEMICONDBEIJINGPEOPLES R CHINA
Adobe PDF(60Kb)  |  Favorite  |  View/Download:773/248  |  Submit date:2010/11/15