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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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Investigation of the geometrical effect on photoelectric properties of nano-ZnO with doped liquid crystal technique 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 卷号: 108, 期号: 3, 页码: 745-750
Authors:  Xiang Y (Xiang, Ying);  Liu YK (Liu, Yi-Kun);  Chen YH (Chen, Yong-Hai);  Guo YB (Guo, Yu-Bing);  Xu MY (Xu, Ming-Ya);  Ding Z (Ding, Zhen);  Xia T (Xia, Tian);  Wang JH (Wang, Jia-Hui);  Song YW (Song, Yi-Wu);  Yang MZ (Yang, Ming-Ze);  Wang E (Wang, Everett);  Song YH (Song, Yu-Hong);  Yang SL (Yang, Shun-Lin);  She GQ (She, Guang-Quan)
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Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Authors:  Wang J (Wang Jun);  Li SS (Li Shu-Shen);  Lu YW (Lue Yan-Wu);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo);  Wang, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: junwang07@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Binding Energy  
Effect of small-angle scattering on the integer quantum Hall plateau 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 2, 页码: 436-438
Authors:  Shu Q;  Lin YW;  Xing XD;  Yao JH;  Pi B;  Shu YC;  Wang ZG;  Xu JJ;  Shu, Q, Nankai Univ, Minist Educ, Key Lab Adv Technique & Fabricat Weak Light Ninli, Tianjin 300457, Peoples R China. E-mail: shuyc@anankai.edu.cn
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Magnetic-field  Heterostructures  Resistance  Dependence  
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Authors:  Shu Q;  Shu YC;  Zhang GJ;  Liu RB;  Yao JH;  Pi B;  Xing XD;  Lin YW;  Xu JJ;  Wang ZG;  Shu, YC, Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China. E-mail: shuyc@nankai.edu.cn
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Two-dimensional Electron Gas  Quantum Hall Effect  Sdh Oscillations  Persistent Photoconductivity  Heterostructures  Alxga1-xas  Scattering  Lifetime  Mobility  Gaas  Te  
A model for scattering due to interface roughness in finite quantum wells 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
Authors:  Li JM;  Wu JJ;  Han XX;  Lu YW;  Lin XL;  Zhu QS;  Wang ZG;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: jiemli@red.semi.ac.cn
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Single-particle  Electron-gas  Mobility  Gaas  Disorder  
Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires 期刊论文
PHYSICAL REVIEW B, 2004, 卷号: 69, 期号: 7, 页码: Art.No.075304
Authors:  Song, YP;  Zhang, HZ;  Lin, C;  Zhu, YW;  Li, GH;  Yang, FH;  Yu, DP;  Yu, DP, Peking Univ, Sch Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. 电子邮箱地址: yudp@pku.edu.cn
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Single-crystals  
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Authors:  Dong ZY;  Zhao YW;  Zeng YP;  Duan ML;  Sun WR;  Jiao JH;  Lin LY;  Dong ZY,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Annealing  Defects  Etching  Semiconducting Indium Phosphide  Fe-doped Inp  Semiinsulating Inp  Indium-phosphide  Defects  Diffusion  Crystals  Wafers  
Effects of annealing ambient on the formation of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Authors:  Deng AH;  Mascher P;  Zhao YW;  Lin LY;  Deng AH,Sichuan Univ,Dept Appl Phys,Sichuan 610065,Peoples R China.
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Undoped Semiinsulating Inp  Low Fe Content  Positron-lifetime  Phase Epitaxy  Pressure  Vacancy  Indium  Annihilation  Phosphide  Wafers  
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Authors:  Dong HW;  Zhao YW;  Zeng YP;  Jiao JH;  Li JM;  Lin LY;  Dong HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Diffusion  Interfaces  Substrates  Molecular Beam Epitaxy  Phosphides  Semiconducting Indium Phosphide  Undoped Semiinsulating Inp  Chemical-vapor-deposition  Phosphide Vapor  Fe  Interface  Photoluminescence  Wafer  Uniformity  Diffusion  Pressure