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无权访问的条目 期刊论文
作者:  Xiong B;  Zhang SB;  Guo L;  Zhang L;  Lin XC;  Li JM;  Xiong, B, Chinese Acad Sci, Lab All Solid State Light Sources, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: xiongbo@semi.ac.cn
Adobe PDF(694Kb)  |  收藏  |  浏览/下载：1559/425  |  提交时间：2010/04/05
无权访问的条目 期刊论文
作者:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
Adobe PDF(387Kb)  |  收藏  |  浏览/下载：1084/330  |  提交时间：2010/04/03
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1714/433  |  提交时间：2010/03/09
Algan/gan Hemts  
The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文
ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Li J;  An JM;  Wang HJ;  Xia JL;  Gao DS;  Hu XW;  Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1416/412  |  提交时间：2010/03/29
Porous Silicon  
Mode analysis of the UV-written channel waveguide - art. no. 60340J 会议论文
ICO20 Optical Design and Fabrication丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Xia JL;  Wu YD;  An JM;  Li J;  Gao DS;  Hu XW;  Xia, JL, Chinese Acad Sci, Inst Semicond, Res & Dev, Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：1255/296  |  提交时间：2010/03/29
Uv-written  
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1345/359  |  提交时间：2010/03/29
Mocvd  
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Liu, Z;  Wang, JX;  Wang, XL;  Hu, GX;  Guo, LC;  Liu, HX;  Li, JP;  Li, JM;  Zeng, YP;  Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
Adobe PDF(253Kb)  |  收藏  |  浏览/下载：1559/543  |  提交时间：2010/03/29
Surface Morphology