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Hydrogen-dependent lattice dilation in GaN 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Authors:  Zhang JP;  Wang XL;  Sun DZ;  Kong MY;  Zhang JP,Chinese Acad Sci,Inst Semicond,Novel Mat Ctr,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(59Kb)  |  Favorite  |  View/Download:858/313  |  Submit date:2010/08/12
Optical-properties  Gallium Nitride  Sapphire  Epilayers  Stress  Semiconductors  Electrons  Silicon  Strain  Films  
Hydrogen contaminant and its correlation with background electrons in GaN 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 卷号: 14, 期号: 5, 页码: 403-405
Authors:  Zhang JP;  Sun DZ;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP,Chinese Acad Sci,Inst Semicond,Novel Mat Ctr,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(76Kb)  |  Favorite  |  View/Download:959/271  |  Submit date:2010/08/12
Gallium Nitride  Films  Donor