中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共2条，第1-2条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1302/307  |  提交时间：2010/11/15
Stress  Growth  
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu JP;  Kong MY;  Liu XF;  Li JP;  Huang DD;  Li LX;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1398/272  |  提交时间：2010/11/15
Stranski-krastanow Growth  Quantum Dots  Relaxation  Inas