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Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2013, 卷号: 52, 页码: 150–154
Authors:  Liu, Changbo;  Yang, Shaoyan;  Shi, Kai;  Liu, Guipeng;  Zhang, Heng;  Jin, Dongdong;  Gu, Chengyan;  Zhao, Guijuan;  Sang, Ling;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
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Spacer layer thickness fluctuation scattering in a modulation-doped Al xGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu, Cheng-Yan;  Liu, Gui-Peng;  Shi, Kai;  Song, Ya-Feng;  Li, Cheng-Ming;  Liu, Xiang-Lin;  Yang, Shao-Yan;  Zhu, Qin-Sheng;  Wang, Zhan-Guo
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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu CY (Gu Cheng-Yan);  Liu GP (Liu Gui-Peng);  Shi K (Shi Kai);  Song YF (Song Ya-Feng);  Li CM (Li Cheng-Ming);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
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Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
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Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083112
Authors:  Song YF (Song Yafeng);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Xu XQ (Xu Xiaoqing);  Wang J (Wang Jun);  Guo Y (Guo Yan);  Shi K (Shi Kai);  Li ZW (Li Zhiwei);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
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Optical Phonon Energy  Inversion-layers  Transitions  Relaxation  Lasers  States  
利用温度周期调制生长氧化锌材料的方法 专利
专利类型: 发明, 专利号: CN102206856A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  时凯;  刘祥林;  魏鸿源;  焦春美;  王俊;  李志伟;  宋亚峰;  杨少延;  朱勤生;  王占国
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