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A Novel Architecture of Vision Chip for Fast Traffic Lane Detection and FPGA Implementation 会议论文
2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, Changsha, PEOPLES R CHINA, 2009
作者:  Li YJ (Li Yuan-Jin);  Zhang WC (Zhang WanCheng);  Wu NJ (Wu Nan-Jian);  Li, YJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn
Adobe PDF(9352Kb)  |  收藏  |  浏览/下载：1811/355  |  提交时间：2010/04/13
Vision Chip  Safety Driving Assist  Lane Detection  Dual-core  Processing Element Array  
Research of Face Detection System Applied for Detecting Faces with Complex Background and Illumination 会议论文
FIFTH INTERNATIONAL CONFERENCE ON FUZZY SYSTEMS AND KNOWLEDGE DISCOVERY, Jinan, PEOPLES R CHINA, OCT 18-20, 2008
作者:  Dai L;  Li WJ;  Chen X;  Jin XX;  Qu YF;  Dai, L, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100083, Peoples R China.
Adobe PDF(318Kb)  |  收藏  |  浏览/下载：1237/244  |  提交时间：2010/03/09
Image Preprocessing  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1393/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1318/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1412/302  |  提交时间：2010/10/29
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