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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
Adobe PDF(534Kb)  |  Favorite  |  View/Download:1140/394  |  Submit date:2010/03/08
Inn  Mocvd  Mobility  
Bandwidth Design for CMOS Monolithic Photoreceiver 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 677-682
Authors:  Nian Hua;  Mao Luhong;  Li Wei;  Chen Hongda;  Jia Jiuchun
Adobe PDF(434Kb)  |  Favorite  |  View/Download:793/231  |  Submit date:2010/11/23