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Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 卷号: 46, 期号: 20, 页码: 205103
Authors:  Su, X. J.;  Xu, K.;  Xu, Y.;  Ren, G. Q.;  Zhang, J. C.;  Wang, J. F.;  Yang, H.
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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Multiple-quantum Wells  
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Authors:  Wang, XL (Wang, X. L.);  Zhao, DG (Zhao, D. G.);  Jahn, U (Jahn, U.);  Ploog, K (Ploog, K.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, H.);  Liang, JW (Liang, J. W.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Photodiodes  
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Authors:  Liu, W (Liu, W.);  Wang, JF (Wang, J. F.);  Zhu, JJ (Zhu, J. J.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, H.);  Liu, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: liuwei@red.semi.ac.cn
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Stress