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Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Liu, J;  Zhang, SJ;  Hu, YH;  Xie, L;  Huang, YZ;  Zhu, NH;  Liu, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(338Kb)  |  收藏  |  浏览/下载：1353/314  |  提交时间：2010/03/09
Semiconductor Optical Amplifier  Microwave Frequency Response  Direct-subtracting Method  Vector Network Analyzer  Multisectional Model  Rate Equation  Steady State  Small-signal State  
Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)  |  收藏  |  浏览/下载：1464/265  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1153/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1139/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:  Zhang WC;  Li Z;  Siddons DP;  Huang T;  Zhao LJ;  Kakuno EM;  Pietraski P;  Li CJ;  Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)  |  收藏  |  浏览/下载：1301/322  |  提交时间：2010/11/15
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1468/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films