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The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
Authors:  Lu SL;  Wang JN;  Huang JS;  Bian LF;  Jiang DS;  Yang CL;  Dai JM;  Ge WK;  Wang YQ;  Zhang JY;  Shen DZ;  Lu SL,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1004/306  |  Submit date:2010/08/12
Photoluminescence  Metalorganic Chemical Vapor Deposition  Epilayer  Semiconducting Ii-vi Materials  Molecular-beam Epitaxy  Gap  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(176Kb)  |  Favorite  |  View/Download:912/268  |  Submit date:2010/08/12
Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold