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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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Saturation of the junction voltage in GaN-based laser diodes 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 18, 页码: 183509
Authors:  Feng, M.X.;  Liu, J.P.;  Zhang, S.M.;  Liu, Z.S.;  Jiang, D.S.;  Li, Z.C.;  Wang, F.;  Li, D.Y.;  Zhang, L.Q.;  Wang, H.;  Yang, H.
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The influence of pressure on the growth of InAlN/AlN/GaN heterostructure 期刊论文
EPJ Applied Physics, 2012, 卷号: 57, 期号: 3, 页码: 30103
Authors:  Bi, Y;  Wang, X.L;  Wang, C.M;  Li, J.P;  Liu, H.X;  Chen, H;  Xiao, H.L;  Feng, C;  Jiang, L.J
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