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Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan,;  Bi, Y.(ybi@semi.ac.cn)
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Poisson Equation  
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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GaAs基半导体激光器热特性 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 11, 页码: 2134-2137
Authors:  乔彦彬;  冯士维;  马骁宇;  王晓薇;  郭春生;  邓海涛;  张光沉
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