SEMI OpenIR

Browse/Search Results:  1-3 of 3 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248
Authors:  H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
Adobe PDF(853Kb)  |  Favorite  |  View/Download:25/1  |  Submit date:2019/11/19
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  J.P. Liu;  L.Q. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
Adobe PDF(792Kb)  |  Favorite  |  View/Download:241/4  |  Submit date:2017/03/10
GaN high electron mobility transistors with AlInN back barriers 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 662, 页码: 16-19
Authors:  X.G. He;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  P. Chen;  Z.S. Liu;  L.C. Le;  J. Yang;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
Adobe PDF(1208Kb)  |  Favorite  |  View/Download:234/4  |  Submit date:2017/03/10