中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共5条，第1-5条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Terahertz pulse generation with LT-GaAs photoconductive antenna 会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
作者:  Cui, LJ (Cui, L. J.);  Zeng, YP (Zeng, Y. P.);  Zhao, GZ (Zhao, G. Z.);  Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1019Kb)  |  收藏  |  浏览/下载：1143/326  |  提交时间：2010/03/29
Temperature-grown Gaas  Carrier Dynamics  Emission  
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xie, HY;  Pan, JQ;  Yang, H;  Zhao, LJ;  Zhu, HL;  Wang, LF;  Cui, AH;  Wang, W;  Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1573/404  |  提交时间：2010/03/29
Wide Gain Bandwidth  Dfb Laser  Non-identical Quantum Well  Cwdm  Superluminescent Diodes  
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wu J;  Zeng YP;  Cui LJ;  Zhu ZP;  Wang BX;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1157/174  |  提交时间：2010/11/15
Inp(001)  Epitaxy  Gaas  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1244/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1496/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility