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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device  
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
SOLID-STATE ELECTRONICS, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Authors:  Wang, XL;  Chen, TS;  Xiao, HL;  Wang, CM;  Hu, GX;  Luo, WJ;  Tang, J;  Guo, LC;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Algan/aln/gan  Hemts  Sic  Power  
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates 期刊论文
SOLID-STATE ELECTRONICS, 2005, 卷号: 49, 期号: 8, 页码: 1387-1390
Authors:  Wang XL;  Wang CM;  Hu GX;  Wang JX;  Chen TS;  Jiao G;  Li JP;  Zeng YP;  Li JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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