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The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM;  Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：7101/2096  |  提交时间：2010/03/09
Gan-based Led  Grinding  Ray Tracing  
An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(328Kb)  |  收藏  |  浏览/下载：1212/276  |  提交时间：2010/03/09
SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Yu JZ (Yu Jinzhong);  Chen SW (Chen Shaowu);  Li ZY (Li Zhiyong);  Chen YY (Chen Yuanyuan);  Li YT (Li Yuntao);  Li YP (Li Yanping);  Liu JW (Liu Jingwei);  Yang D (Yang Di);  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：2439/692  |  提交时间：2010/03/29
Soi  
Recent progresses of SOI-based photonic devices - art. no. 60201R 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Yu JZ;  Chen SW;  Li ZY;  Chen YY;  Sun F;  Li YT;  Li YP;  Liu JW;  Yang D;  Xia JS;  Li CB;  Wang QM;  Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(442Kb)  |  收藏  |  浏览/下载：1700/362  |  提交时间：2010/03/29
Soi  
SOI-based thermo-optic waveguide switch matrix with spot size converters 会议论文
2005 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005
作者:  Yu JZ;  Li YP;  Liu JW;  Yang D;  Chen YY;  Sun F;  Chen SW;  Wang QM;  Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(521Kb)  |  收藏  |  浏览/下载：1388/305  |  提交时间：2010/03/29
Silicon-on-insulator  
Structural optimizations of SOI-based single-mode rib waveguide bends 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Chen, YY;  Yan, QF;  Yang, D;  Chen, SW;  Yu, JZ;  Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1105/216  |  提交时间：2010/03/29
Silicon-on-insulator  Bend Waveguide  Bend Loss  Integrated Optics  Silicon-on-insulator  
16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Chen HD;  Mao LH;  Jun T;  Kun L;  Yun D;  Huang YZ;  Wu RH;  Jun F;  Ke XM;  Liu HY;  Wang Z;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(418Kb)  |  收藏  |  浏览/下载：1695/269  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Surface-emitting Lasers  Vlsi  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1261/319  |  提交时间：2010/11/15
Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Electronic characteristics of InAs self-assembled quantum dots 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:  Wang HL;  Feng SL;  Zhu HJ;  Ning D;  Chen F;  Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载：1119/237  |  提交时间：2010/11/15
Inas/gaas Quantum Dots  Self-assembled Structure  Dlts  Pl  Band Offset  Energy-levels  Carrier Relaxation  Spectroscopy