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Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.033503
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Djurisic AB (Djurisic A. B.);  Beling CD (Beling C. D.);  Cheung CK (Cheung C. K.);  Cheung CH (Cheung C. H.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail:
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Molecular-beam Epitaxy  N-type Gan  Electrical-properties  Bias Leakage  Diodes  Oxygen