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Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  Xu XH;  Niu ZC;  Ni HQ;  Xu YQ;  Zhang W;  He ZH;  Han Q;  Wu RH;  Jiang DS;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
Adobe PDF(199Kb)  |  Favorite  |  View/Download:917/250  |  Submit date:2010/03/17
Molecular Beam Epitaxy  
Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices 期刊论文
ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 5, 页码: 1474-1482
Authors:  Ni HQ;  Xu XH;  Wei Z;  Xu YQ;  Niu ZC;  Wu RH;  Ni, HQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  Favorite  |  View/Download:837/242  |  Submit date:2010/03/09
Superlattice