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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)  |  收藏  |  浏览/下载：2471/490  |  提交时间：2011/07/17
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载：2422/494  |  提交时间：2011/07/15
Strain-compensated InGaAs/InAlAs quantum-cascade lasers 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 835-836 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Liu FQ (Liu Feng-Qi);  Wang ZG (Wang Zhanguo);  Li L (Li Lu);  Wang LJ (Wang Lijun);  Liu JQ (Liu Junqi)
Adobe PDF(324Kb)  |  收藏  |  浏览/下载：1531/412  |  提交时间：2011/07/14